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基于弛豫铁电单晶PMN-PT的新型器件(英文版)

本书入选“清华大学优秀博士学位论文丛书”。

作者:方华靖
定价:89
印次:1-1
ISBN:9787302657033
出版日期:2024.03.01
印刷日期:2024.03.25

《基于弛豫铁电单晶PMN-PT的新型器件(英文版)》一书介绍了基于铌镁酸铅-钛酸铅晶体(PMN-PT)设计开发的原型器件,初步探索了铁电材料在信息技术领域的新应用。首先,利用PMN-26PT单晶作为介电层,单层二硫化钼作为沟道半导体构筑了一种光热调控型场效应晶体管,为FET器件提供了一种新的策略。其次,采用银纳米线作为透明顶电极,在PMN-28PT晶体上单片集成了能够覆盖紫外至太赫兹范围的超宽光谱探测器。最后,通过集成摩擦电纳米发电机和铁电FET设计了一种自驱动模块。

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Supervisor’s Foreword As an important ferroelectric material, Pb(Mg1/3Nb2/3)O3-xPbTiO3 (PMN-PT) solid solutions combined the advantages of relaxor ferroelectric PMN and ferroelectric PT predictably. With the modi?ed Bridgman technique, large-size and high-quality PMN-PT single crystals have been successfully grown. The single crystals with the composition near the morphotropic phase boundary (MPB) exhibit ultra high piezoelectric constant of *2500 pC/N and large electromechanical coupling coef?cient up to 0.9. In recent years, piezoelectric devices based on the PMN-PT single crystals have received much attention and made a revolution in the elec- tromechanical transduction area. In contrast, the applications related to their excellent ferroelectric and pyroelectric properties of this multifunctional materials are still not mature enough. Therefore, further investigation on extending their ferroelectric and pyroelectric applications is highly desirable.  The main aim of this doctoral thesis is to explore the applications of ferroelectric materials such as PMN-PT single crystals in information technology. Several prototype devices have been designed and fabricated which are responsible for the collection, processing and storage of the information data. For example, an optothermal ?eld effect transistor (FET) based on the pyroelectric PMN-PT single crystal and MoS2 single-layer ?lm is introduced in Chap. 2. Infrared light can be used as the input signal instead of the gate voltage to realize remote controlling of the channel current. In Chap. 3, a new photodetector with ultra-wide spectral response in the ultraviolet to terahertz band has been achieved by using the high pyroelectric coef?cient of PMN-PT single crystals. The detecting performance is improved through domain engineering and structural optimization of the device. To use the mechanical energy in the environment as the energy source for information writing, a self-powered ferroelectric memory system is demonstrated in Chap. 4. The data can be written in the PMN-PT-based FET by tapping a triboelectric nanogenerator.  The research was carried out at Department of Chemistry in Tsinghua University with the cooperation from Department of Applied Physics in The Hong Kong Polytechnic University, Department of Physics in Tsinghua University and Institute of Microelectronics in Tsinghua University. The research contents in this thesis are VIII Supervisor’s Foreword not only in the frontiers of ferroelectric materials, but also at the multidisciplinary highly cross-cutting edge. Some excited results and design ideas are expected to drive ferroelectric materials to play an important role in a wide range of applications. Beijing, China Assoc. Prof. Qingfeng Yan January 2020

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  • 方华靖,博士,毕业于清华大学化学系,攻读博士期间以第一作者身份发表SCI论文十余篇。现就职于西安交通大学材料科学与工程学院,主要从事铁电、光电材料的应用研究。

  • 弛豫铁电单晶是一类重要的多功能材料,《基于弛豫铁电单晶PMN-PT的新型器件(英文版)》介绍了当前该材料在各个领域的应用现状,以及基于该晶体设计开发的三类原型器件,展示了铁电材料在信息技术领域的应用前景。《基于弛豫铁电单晶PMN-PT的新型器件(英文版)》可作为相关专业科研人员、教师和研究生的参考书,也可供相关领域高级工程技术人员阅读和参考。

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  • Contents

    1 Introduction 1

    1.1 Ferroelectric Materials 1

    1.1.1 Basic Concept of Ferroelectric Materials 1

    1.1.2 Physical Properties of Ferroelectric Materials 3

    1.2 PMN-PT Relaxor Ferroelectric Single Crystals 4

    1.2.1 PMN-PT Complex Perovskite Structure 4

    1.2.2 Research Progress of PMN-PT Single Crystals 6

    1.2.3 The Applications of PMN-PT Single Crystals 9

    1.3 The Main Research Contents of This Thesis 21

    References 24

    2 An Optothermal Field Effect Transistor Based on PMN-26PT Single Crystal 29

    2.1 Introduction of This Chapter 29

    2.1.1 Field Effect Transistors and the ‘Photonics Revolution’   29

    2.1.2 Interface Engineering of Two-Dimensional Channel Semiconductor 30

    2.2 Th...

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